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April 2001
FDC645N
N-Channel PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
? 5.5 A, 30 V.
R DS(ON) = 30 m ? @ V GS = 4.5 V
R DS(ON) = 26 m ? @ V GS = 10 V
switching PWM controllers. It has been optimized for
low gate charge, low R DS(ON) and fast switching speed.
Applications
? DC/DC converter
? High performance trench technology for extremely
low R DS(ON)
? Low gate charge (13 nC typical)
? High power and current handling capability
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
30
± 12
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
5.5
A
– Pulsed
20
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.645
Device
FDC645N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2000 Fairchild Semiconductor Corporation
FDC645N Rev C(W)
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FDC6506P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6
FDC6506P_Q 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube